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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Anufriev, R. Chauvin, N. Barakat, J.-B. Khmissi, H. Naji, K. Patriarche, G. Letartre, X. Gendry, M. Bru-Chevallier, C. |
| Copyright Year | 2014 |
| Description | Author affiliation: Inst. des Nanotechnol. de Lyon (INL), Univ. de Lyon, Villeurbanne, France (Anufriev, R.; Chauvin, N.; Bru-Chevallier, C.) || Lab. de Photonique et de Nanostruct. (LPN), Marcoussis, France (Patriarche, G.) || Ecole Centrale de Lyon, Univ. de Lyon, Ecully, France (Barakat, J.-B.; Naji, K.; Letartre, X.; Gendry, M.) || Lab. de Micro-Optoelectron. et Nanostruct. (LMON), Univ. de Monastir, Monastir, Tunisia (Khmissi, H.) |
| Abstract | Purely wurtzite InAs/InP quantum rod nanowires (QRod-NWs) emitting at 1.55 μm have been successfully grown on silicon substrates by VLS assisted molecular beam epitaxy. Microphotoluminescence studies of single QRod-NWs reveal a highly linearly polarized emission parallel to the nanowires axis. This very high degree of linear polarization (> 0.9) can be explained by the photonic nature of the NW structure. Moreover, these QRod-NWs reveal a broad peak with an asymmetric lineshape at 10K. From experimental and theoretical studies, we conclude that this feature is a consequence of a piezoelectric field induced by the strained InAs QRod. |
| Starting Page | 1 |
| Ending Page | 2 |
| File Size | 225293 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781479957293 |
| DOI | 10.1109/ICIPRM.2014.6880556 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-05-11 |
| Publisher Place | France |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Indium phosphide Photonics Electric fields Nanowires Silicon Substrates Anisotropic magnetoresistance |
| Content Type | Text |
| Resource Type | Article |
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