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Dimension Effect on Breakdown Voltage of Partial SOI LDMOS
| Content Provider | Directory of Open Access Journals (DOAJ) |
|---|---|
| Author | Yue Hu Huazhen Liu Qianqian Xu Luwen Wang Jing Wang Shichang Chen Peng Zhao Ying Wang Gaofeng Wang |
| Abstract | Dimension effect on breakdown voltage (BV) of lateral double-diffused metal-oxide- semiconductor field-effect transistor in partial silicon-on-insulator (PSOI) technology is comprehensively studied. The maximum BV $(BV_{max}$) is examined under various settings of the device length L and the active silicon film thickness t. It is shown that there exists an optimal pair of (L, t) for PSOI at which the highest BV can be achieved. The ratio of L/t is better chosen between 5 and 7 for the device designs, in particular, L/t = 6 can be considered as the optimal one theoretically. Moreover, impacts of the silicon window length $L_{w}$ and the drift doping concentration $N_{dr}$ on the BV, the on-resistance $(R_{on}$) and the figure-of-merit (=BV^{2}$/R_{on}$) are also carefully studied. |
| Related Links | https://ieeexplore.ieee.org/document/7892003/ |
| e-ISSN | 21686734 |
| DOI | 10.1109/JEDS.2017.2690363 |
| Journal | IEEE Journal of the Electron Devices Society |
| Issue Number | 3 |
| Volume Number | 5 |
| Language | English |
| Publisher | IEEE |
| Publisher Date | 2017-01-01 |
| Publisher Place | United States |
| Access Restriction | Open |
| Subject Keyword | Electrical engineering. Electronics. Nuclear engineering Ldmos Partial Silicon-on-insulator (psoi) Breakdown Voltage On-resistance |
| Content Type | Text |
| Resource Type | Article |
