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Non-destructive evaluation of carrier transport properties in CuInS2 and CuInSe2 thin films using photothermal deflection technique
| Content Provider | CUSAT-Thesis |
|---|---|
| Author | Sudha Kartha, C. Vijayakumar, K. P. Tina, Sebastian Deepa, K. G. Anita, Warrier R. |
| Abstract | Photothermal deflection technique (PTD) is a non-destructive tool for measuring the temperature distributionin and around a sample, due to various non-radiative decay processes occurring within the material. This toolwas used to measure the carrier transport properties of CuInS2 and CuInSe2 thin films. Films with thickness<1 μm were prepared with different Cu/In ratios to vary the electrical properties. The surface recombinationvelocity was least for Cu-rich films (5×105 cm/s for CuInS2, 1×103 cm/s for CuInSe2), while stoichiometricfilms exhibited high mobility (0.6 cm2/V s for CuInS2, 32 cm2/V s for CuInSe2) and high minority carrier lifetime(0.35 μs for CuInS2, 12 μs for CuInSe2 |
| File Format | |
| Language | English |
| Publisher | ELSEVIER |
| Access Restriction | Open |
| Subject Keyword | Photothermal Thinfilm Mobility Carrier lifetime Surface recombination velocity |
| Content Type | Text |
| Resource Type | Article |