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I: Abstract: Analysis of Avalanche Behaviour for Paralleled MOSFETs
| Content Provider | CiteSeerX |
|---|---|
| Author | Chen, Jingdong Downer, Scott Murray, Anthony Divins, David |
| Abstract | In this study, an avalanche extension to existing quasi-dynamic thermal model is developed. And the current and thermal distribution among paralleled devices under avalanche condition is investigated. The statistic distribution of breakdown voltage, terminal stray inductance and thermal coupling all affect final electrical and thermal balance of paralleled devices. Without careful design consideration, it may cause reliability problem. So conclusions in this paper could provide useful guidelines for high power discrete or module applications with paralleled power devices. Parallel MOSFET devices are now commonly used in both module and discrete automotive application where high current must be processed, for example |
| File Format | |
| Access Restriction | Open |
| Subject Keyword | Avalanche Behaviour Paralleled Mosfets Paralleled Device Module Application Careful Design Consideration High Power Discrete Affect Final Electrical Thermal Distribution Parallel Mosfet Device Terminal Stray Inductance Breakdown Voltage Quasi-dynamic Thermal Model Avalanche Condition Useful Guideline Paralleled Power Device Reliability Problem Discrete Automotive Application Statistic Distribution Thermal Balance Avalanche Extension |
| Content Type | Text |
| Resource Type | Article |
