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Current–voltage characteristics of Ag, Al, Ni–(n)CdTe junctions (2000)
| Content Provider | CiteSeerX |
|---|---|
| Author | Sarmah, P. C. Rahman, A. |
| Abstract | Abstract. Schottky barriers of Ag, Al, Ni–(n)CdTe structures have been prepared and studied. The films were prepared by rf sputtering and doped with Cd metal. Diode ideality factor of these junctions are greater than unity and barrier height varies from 0×6–0×7 eV and are affected by room illumination. Photovoltaic effect of these junctions was very poor and fill factor below 0×4. Low doping concentration, high defect density, preence of an interfacial layer and presence of high series resistance are perceived to affect theJ –V characteristic. |
| File Format | |
| Publisher Date | 2000-01-01 |
| Access Restriction | Open |
| Subject Keyword | Schottky Barrier Rf Sputtering Diode Ideality Factor Cdte Junction Room Illumination Photovoltaic Effect Fill Factor Cd Metal High Defect Density Interfacial Layer High Series Resistance Barrier Height Varies Cdte Structure Current Voltage Characteristic Thej Characteristic |
| Content Type | Text |
| Resource Type | Article |
