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Sims depth profiling of thin boron nitride insulating films.
| Content Provider | CiteSeerX |
|---|---|
| Author | Cwil, M. Firek, P. Konarski, P. Werbowy, A. |
| Abstract | Secondary ion mass spectrometry (SIMS) has been used to determine depth profiles of thin boron ni-tride films adapted as insulators in metal–insulator–semiconductor (MIS) devices. The negative secon-dary ion detection has been chosen to overcome the sample surface charging due to Ar+ primary ion beam bombardment and to determine the elemental distribution without an electron flood gun treatment. Thin boron nitride films of 20–200 nm thickness were obtained by the radiofrequency plasma-assisted chemi-cal vapour deposition method on Si-substrate with various flows of the gas source. The effect of silicon diffusion from the substrate into the insulator on nitrogen detection due to multiply charged Si ion mass interferences is observed. In order to entirely eliminate the silicon contribution to nitrogen signal in SIMS, we propose to produce BN film on two substrates (e.g., Si and GaAs) simultaneously and then to determine the nitrogen profile. The data obtained for MIS devices formed by covering the BN film with Al layer reveal also Al presence in the insulating film. Key words: SIMS; boron nitride; depth profiling; charging effects 1. |
| File Format | |
| Access Restriction | Open |
| Subject Keyword | Thin Boron Sims Depth Profiling Bn Film Electron Flood Gun Treatment Ar Primary Ion Beam Bombardment Various Flow Elemental Distribution Thin Boron Ni-tride Film Nitrogen Profile Al Presence Al Layer Reveal Nitrogen Detection Sample Surface Mi Device Insulating Film Negative Secon-dary Ion Detection Nm Thickness Metal Insulator Semiconductor Gas Source Depth Profile Secondary Ion Mass Spectrometry Si Ion Mass Interference Silicon Contribution Silicon Diffusion Depth Profiling |
| Content Type | Text |
