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Free growth of 4h-sic by sublimation method.
| Content Provider | CiteSeerX |
|---|---|
| Author | Dedulle, Jean-Marc Anikin, Mikhail Pons, Michel Blanquet, Elisabeth Pisch, Er Bernard, Claude |
| Abstract | Abstract. 4H-SiC crystals of cylindrical shape 25 mm and 45 mm in diameter have been grown by the Modified Lely method in a graphite crucible with a guide. The crystals had not mechanical contacts with the walls of the crucible and no formation of polycrystalline SiC during the growth to decrease the stresses. This was confirmed by the facets observed at the edges of the crystals. Numerical simulations of the growth process have been performed. |
| File Format | |
| Access Restriction | Open |
| Subject Keyword | Free Growth Sublimation Method 4h-sic Crystal Mechanical Contact Growth Process Cylindrical Shape Numerical Simulation Modified Lely Method Polycrystalline Sic |
| Content Type | Text |
| Resource Type | Article |