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J. Phys. ZV France 9 (1 999) Modelling of SIC sublimation growth process: Influence of experimental parameters on crystal shape
| Content Provider | CiteSeerX |
|---|---|
| Author | Blanquet, E. Pons, M. Bernard, C. Madar, R. Pisch, A. Dedulle, J. M. Anikin, M. |
| Abstract | Abstract: Dil'lerent computational tools help to provide information on the sublimatio~i growth of Sic single crysials by the inotlified-Lely mcthod. Local thermodynamic equilibrium calculations coupled to heat and mass transfer can give valuable data on thc zrowth rate and the shape of the growing crystal. In this contribution, we focus on the influence of the overall Ar prcssurc in the growth cavity on the growing crystal shape for two different cavity geometries (with and without a screen next to thc sccd crystal) having similar temperatu1.e distributions. The results of this modelling will be compared to the experiments. 1. |
| File Format | |
| Access Restriction | Open |
| Content Type | Text |