NDLI: Beam Test of a Large Area n-on-n Silicon Strip Detector with Fast Binary Readout Electronics (0)

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Beam Test of a Large Area n-on-n Silicon Strip Detector with Fast Binary Readout Electronics (0)

Content Provider	CiteSeerX
Author	Gilchriese, M. Shapiro, M. Lozano-Bahilo, J. Ciocio, A. Kipnis, I. Kohriki, Unno Emes, J. Holl, S. Haber, C.
Abstract	A large area (60 mm × 60 mm) n-bulk and n-strip readout silicon strip detector was prototyped for the ATLAS SCT detector. Detector modules of 12 cm strip length were made by butting two detectors. One of the 12 cm modules was irradiated with protons to a fluence of 1.2 × 10 14 p/cm 2 . A beam test was carried out for the non-irradiated and the irradiated detector modules. Efficiency, noise occupancy and performance in the edge regions were analyzed using the beam test data. High efficiency was obtained for the nonirradiated detector and for the irradiated detector for bias voltages down to about half the full depletion voltage. The noise occupancy was <2 × 10 -4 for the 12 cm strips. The measurement of the edge region exhibited a difference in the sensitivity under the bias resistance where no extension of the n + -implant was fabricated. I. INTRODUCTION A large area silicon strip detector (60 mm × 60 mm) with n-strip readout electrodes on an n-bulk substrate was fabricated t...
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Subject Keyword	Irradiated Detector Beam Test N-strip Readout Electrode Cm Module N-strip Readout Silicon Strip Detector High Efficiency N-bulk Substrate Detector Module Irradiated Detector Module Fast Binary Readout Electronics Bias Voltage Full Depletion Voltage Beam Test Data Large Area Atlas Sct Detector Noise Occupancy Nonirradiated Detector Cm Strip Bias Resistance Large Area Silicon Strip Detector Cm Strip Length Edge Region
Content Type	Text

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