NDLI: Optimization of doping concentration for three-dimensional bulk silicon microrefrigerators.

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Optimization of doping concentration for three-dimensional bulk silicon microrefrigerators.

Content Provider	CiteSeerX
Author	Zhang, Yan Zeng, Gehong Shakouri, Ali Wang, Peng Yang, Bao Bar-Cohen, Avram
Abstract	We designed and fabricated a three-dimensional (3D) silicon microrefrigerator, which demonstrates a cooling power density over 200W/cm 2 with only ~1 0 C cooling. The high cooling power density is mainly due to the high thermal conductivity and heat spreading effects. These devices have potential application in hot-spots management to reduce the chip peak temperature and realize on chip thermal management. A finite element model is developed to study and optimize these 3D devices. The simulation results showed that the optimized doping concentration to achieve the maximum cooling for these 3D silicon microrefrigerators (5e18 cm-3) is different from the conventional 1D device, where S 2 σ achieves the maximum at the doping of 5e19 cm-3. At its optimized doping concentration, these silicon microrefrigerators could reach a maximum cooling of 3 0 C. Further studies prove that this deviation is due to the non-idea factors inherent within the device, e.g. semiconductor-metal contact resistance, Joule-heating from probe contact resistance etc … Thus to optimize the real device, it is necessary to chose a full model considering all the non-ideal factors.
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Subject Keyword	Doping Concentration Three-dimensional Bulk Silicon Microrefrigerators Power Density Silicon Microrefrigerators Maximum Cooling Optimized Doping Concentration Semiconductor-metal Contact Resistance Real Device Hot-spots Management Probe Contact Resistance Potential Application Simulation Result Finite Element Model Full Model Non-idea Factor Silicon Microrefrigerator Chip Peak Temperature Heat Spreading Effect Chip Thermal Management High Thermal Conductivity Non-ideal Factor
Content Type	Text

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