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Unipolar spin diodes and transistors (2001)
| Content Provider | CiteSeerX |
|---|---|
| Author | Flatté, M. E. Vignale, G. |
| Abstract | Unipolar devices constructed from ferromagnetic semiconducting materials with variable magnetization direction are shown theoretically to behave very similarly to nonmagnetic bipolar devices such as the p − n diode and the bipolar (junction) transistor. Such devices may be applicable for magnetic sensing, nonvolatile memory, and reprogrammable logic. 1 Until recently the emerging field of magnetoelectronics has focused on magnetic metals for conducting components [1]. Multilayer magnetoelectronic devices, such as giant magnetoresistive (GMR) [2] and magnetic tunnel junction (MTJ) [3–5] devices, have revolutionized magnetic sensor technology and hold promise for reprogrammable logic and nonvolatile memory applications. The performance of these devices improves as the spin polarization of the constituent material approaches 100%, and thus there are continuing efforts to find 100% spin-polarized conducting materials. Doped magnetic semiconductors are a promising direction towards such materials, for the band-width of the occupied carrier states is narrow. For example, for nondegenerate carriers |
| File Format | |
| Journal | Applied Physics Letters |
| Language | English |
| Publisher Date | 2001-01-01 |
| Access Restriction | Open |
| Subject Keyword | Unipolar Spin Diode Reprogrammable Logic Spin-polarized Conducting Material Nonvolatile Memory Application Spin Polarization Multilayer Magnetoelectronic Device Doped Magnetic Semiconductor Unipolar Device Promising Direction Towards Material Nonmagnetic Bipolar Device Constituent Material Approach Magnetic Metal Nondegenerate Carrier Variable Magnetization Direction Giant Magnetoresistive Magnetic Sensor Technology Magnetic Sensing Nonvolatile Memory Magnetic Tunnel Junction Carrier State |
| Content Type | Text |
| Resource Type | Article |
