NDLI: Structural Comparison of CIGSS Thin Film Absorber Layer Fabricated on SS and Ti Substrates

Content Provider	The American Society of Mechanical Engineers (ASME) Digital Collection
Author	Ankur, A. Kadam Neelkanth, G. Dhere
Copyright Year	2005
Abstract	Copper indium gallium selenide sulfide, CuIn1−xGaxSe2−ySy (CIGSS) absorber layer was prepared on stainless steel (SS) and SiO2-coated titanium substrates. Comparative study was carried out to analyze the variation in the crystal quality depending on the substrate. Identical parameters were used for deposition and selenization/sulfurization of metallic precursors. This paper presents the observations made on the basis of surface morphology using scanning electron microscopy, crystal quality by x-ray diffraction and chemical composition and concentration-depth profiles by x-ray energy dispersive spectroscopy and Auger electron spectroscopy respectively. Film fabricated on both the substrate had chalcopyrite structure with variation of stoichiometry as well as morphology. Selenization/sulfurization cycle must be modified depending upon the substrate to obtain high quality CIGSS film.
Sponsorship	Solar Energy Division
Starting Page	491
Ending Page	494
Page Count	4
File Format	PDF
ISBN	0791847373
DOI	10.1115/ISEC2005-76178
e-ISBN	0791837653
Volume Number	Solar Energy
Conference Proceedings	ASME 2005 International Solar Energy Conference
Language	English
Publisher Date	2005-08-06
Publisher Place	Orlando, Florida, USA
Access Restriction	Subscribed
Subject Keyword	Cycles Scanning electron microscopy Spectroscopy Stoichiometry Gallium Crystals X-rays X-ray diffraction Thin films Stainless steel Titanium Electron spectroscopy Copper Augers
Content Type	Text
Resource Type	Article

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