NDLI: Chlorine-Ion Related Corrosion in Cu-Al Wirebond Microelectronic Packages

Content Provider	The American Society of Mechanical Engineers (ASME) Digital Collection
Author	Lall, Pradeep Luo, Yihua Nguyen, Luu
Copyright Year	2015
Abstract	The increasing price of gold has resulted in industry interest in use of copper as alternative wire bonds interconnect material. Copper wire has the advantages of the lower cost, lower thermal resistivity, lower electrical resistivity, higher mechanical strength and higher deformation stability over the gold wire. In spite of the upside above, the Cu-Al wire bond is susceptible to the electrolytic corrosion and the reliability of Cu-Al wire bond is of great concern. Typical electronic molding compounds are hydrophilic and absorb moisture when exposed to humid environmental conditions. EMC contain ionic contaminants including chloride ions as a result of the chemical synthesis of the subcomponents of the resin, etching of metallization and the decomposition of the die-attach glue. The presence of moisture in the operating environment of semiconductor package makes the ion more mobile in the EMC. The migration of chloride ions to the Cu-Al interface may induce electrolytic corrosion inside the package causing degradation of the bond interface resulting in eventual failure. The rate at which the corrosion happens in the microelectronic packages is dependent upon the rate at which the ions transport through the EMC in addition to the reaction rate at the interface. In this effort, a multiphysics model for electrolytic corrosion in the presence of chloride has been presented. The contaminant diffusion along with the corrosion kinetics has been modeled. In addition, contaminated samples with known concentration of KCl contaminant have been subjected to the temperature humidity conditions (130°C/100RH)The resistance of the Cu-Al interconnects in the PARR test have been monitored periodically using resistance spectroscopy. The diffusion coefficients of chloride ion at various temperatures in the molding compound have been measured using inductively coupled plasma. Measured diffusion coefficients have been incorporated into the COMSOL multiphysics model. Moisture ingress into the EMC has been quantified through measurements of the weight gain in the EMC. Predictions from the COMSOL multiphysics model have been correlated with experimental data.
Sponsorship	Electronic and Photonic Packaging Division
File Format	PDF
ISBN	9780791856895
DOI	10.1115/IPACK2015-48639
Volume Number	Volume 2: Advanced Electronics and Photonics, Packaging Materials and Processing; Advanced Electronics and Photonics: Packaging, Interconnect and Reliability; Fundamentals of Thermal and Fluid Transport in Nano, Micro, and Mini Scales
Conference Proceedings	ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels
Language	English
Publisher Date	2015-07-06
Publisher Place	San Francisco, California, USA
Access Restriction	Subscribed
Subject Keyword	Semiconductors (materials) Spectroscopy Molding Temperature Deformation Stability Electrolytic corrosion Glues Ions Etching Wire Diffusion (physics) Plasmas (ionized gases) Strength (materials) Corrosion Electrical resistivity Weight (mass) Copper Reliability Resins Failure
Content Type	Text
Resource Type	Article

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