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| Content Provider | ACM Digital Library |
|---|---|
| Author | Zhao, Weisheng Mazoyer, Pascale Chaudhuri, Sumanta Klein, Jacques-Olivier Chappert, Claude |
| Abstract | In this article we present a design method for integrating non-volatile MRAM memory cells into standard CMOS design. The emphasis is on standard cell based flow for general purpose logic and automatic generation or MRAM macros suitable for the applications. We present a design space exploration for this purpose and transient simulation results of the hybrid MTJ/CMOS designs. We continue the article with examples of automatic macro generation, integration layout and a prototype in 130nm CMOS which is designed to test a large subset of this design space. In conclusion we show that a high 3D integration density with reasonable speed can be achieved with automatic flow by sharing the reading/writing circuitry among a number of MTJs. |
| Starting Page | 155 |
| Ending Page | 158 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781450300124 |
| DOI | 10.1145/1785481.1785519 |
| Language | English |
| Publisher | Association for Computing Machinery (ACM) |
| Publisher Date | 2010-05-16 |
| Publisher Place | New York |
| Access Restriction | Subscribed |
| Subject Keyword | Architecture Mram System on chip (soc) Embedded Low power Non-volatile Thermally assisted switching (tas) |
| Content Type | Text |
| Resource Type | Article |
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