Content Provider	Taylor & Francis Online
Author	Neels, Antonia Schifferle, Andreas Dommann, Alex
Abstract	New methods are needed in microsystems technology for evaluating microelectromechanical systems (MEMS) because of their reduced size. The assessment and characterization of mechanical and structural relations of MEMS are essential to assure the long-term functioning of devices, and have a significant impact on design and fabrication.Within this study a concept for the investigation of mechanically loaded MEMS materials on an atomic level is introduced, combining high-resolution X-ray diffraction (HRXRD) measurements with finite element analysis (FEA) and mechanical testing. In situ HRXRD measurements were performed on tensile loaded single crystal silicon (SCSi) specimens by means of profile scans and reciprocal space mapping (RSM) on symmetrical (004) and (440) reflections. A comprehensive evaluation of the rather complex XRD patterns and features was enabled by the correlation of measured with simulated, ‘theoretical’ patterns. Latter were calculated by a specifically developed, simple and fast approach on the basis of continuum mechanical relations. Qualitative and quantitative analysis confirmed the admissibility and accuracy of the presented method. In this context [001] Poisson’s ratio was determined providing an error of less than 1.5% with respect to analytical prediction. Consequently, the introduced procedure contributes to further going investigations of weak scattering being related to strain and defects in crystalline structures and therefore supports investigations on materials and devices failure mechanisms.
Starting Page	219
Ending Page	230
Page Count	12
File Format	PDF HTM / HTML
ISSN	14686996 18785514
DOI	10.1080/14686996.2017.1282800
Journal	Science and Technology of Advanced Materials
Volume Number	18
Issue Number	1
Language	English
Publisher	Taylor & Francis
Publisher Date	2017-03-31
Access Restriction	Open
Subject Keyword	High-resolution X-ray diffraction (HRXRD) Reciprocal space mapping In situ material characterization Single crystal silicon Finite element analysis (FEA) 10 Engineering and Structural materials 106 Metallic materials 201 Electronics / Semiconductor / TCOs 208 Sensors and actuators 303 Mechanical / Physical processing 401 1st principle calculations 504 X-ray / Neutron diffraction and scattering 600 Advance material characterization 600 Mechanical testing and Finite Element Analysis
Content Type	Text
Resource Type	Article
Subject	Materials Science

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