NDLI: Selective area growth of GaN nanorods by using molecular beam epitaxy: Effect of growth temperature and Ga flux

Content Provider	Springer Nature Link
Author	Park, Byung Guon Kim, Song Gang Kumar, R. Saravana Yang, Woo Chul Lee, Sang Tae Choi, Hyo Seock Kim, Moon Deock
Copyright Year	2014
Abstract	Gallium-nitride (GaN) nanorods (NRs) were selectively grown on patterned Ti/Si(111) substrates by using plasma-assisted molecular beam epitaxy. The effects of the growth temperature and the Ga flux on the optical properties of the GaN NRs were investigated. Both the length and the diameter of the GaN NRs decreased with increasing growth temperature whereas the diameter of the GaN NRs remained constant and the length increased with increasing Ga flux. The photoluminescence spectra of GaN NRs grown under different experimental conditions exhibited emission peaks corresponding to neutral-donor-bound excitons (D$^{ O }$X), donor-acceptor pair (DAP), and yellow luminescence (YL) bands at 3.477, 3.26, and 2.25 eV, respectively. Results demonstrate that the variation in the diameters of the GaN NRs has a greater influence on the defect concentration than the lengths of the NRs.
Starting Page	1634
Ending Page	1638
Page Count	5
File Format	PDF
ISSN	03744884
Journal	Journal of the Korean Physical Society
Volume Number	65
Issue Number	10
e-ISSN	19768524
Language	English
Publisher	The Korean Physical Society
Publisher Date	2014-12-06
Publisher Place	Seoul
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	GaN Theoretical, Mathematical and Computational Physics Photoluminescence Plasma-assisted molecular beam epitaxy Selective area growth Nanorods Physics Particle and Nuclear Physics
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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