NDLI: Effect of annealing on ZnO thin films prepared by using the sol-gel method

Content Provider	Springer Nature Link
Author	Kim, Gang Bae Hyun, June Won Lee, Ju Ho Kim, Yeon Jung Shin, Jae Soo
Copyright Year	2012
Abstract	ZnO thin films were spin-coated on Pt substrats (Pt/Ti/SiO$_{2}$/Si) by using a sol-gel process and were characterized as a function of sintering temperature. The films were annealed at 600, 650, 700, and 750 °C to find the optimum annealing temperature in air. The crystalline structure, stress, and c-axis lattice constant were investigated by using X-ray diffraction (XRD). Strong (002) peaks were found in the XRD spectrum of the ZnO films, and the position of the peak changed from 34.48° ∼ 34.53° as the annealing temperature went from 600 °C to 750 °C. The stress decreased with increasing sintering temperature up to 700 °C and then increased until 750 °C. The FWHM for the (002) peak decreased to a minimum at 700 °C and then increased until 750 °C. Grain sizes were investigated by using scanning electron microscopy (SEM). The maximum grain sizes was obtained in the ZnO film sintered at 700 °C; its grains size was about 112 nm in diameter. However, green emissions were not found in ZnO films sintered at temperatures between 600 ∼ 750 °C. Therefore, additional experiments were carried out in order to find green emissions. Films were annealed at 800, 900, 1000, and 1100 °C. The intensities of the peaks in the ZnO film sintered at 1100 °C increased rapidly, and a green emission at about 519 nm was found. At temperatures above 900 °C, the X-ray diffraction peaks for Zn$_{2}$SiO$_{4}$ willemite were found. As the annealing temperature was increased, the relative amounts of silicon atoms and the ratio of oxygen to zinc (O/Zn) increased. This indicates that the origin of the green emissions and the Zn$_{2}$SiO$_{4}$ is related to the amounts of oxygen and silicon present.
Starting Page	1118
Ending Page	1123
Page Count	6
File Format	PDF
ISSN	03744884
Journal	Journal of the Korean Physical Society
Volume Number	60
Issue Number	7
e-ISSN	19768524
Language	English
Publisher	The Korean Physical Society
Publisher Date	2012-04-14
Publisher Place	Seoul
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Sol-gel Theoretical, Mathematical and Computational Physics X-ray diffraction Cathodoluminescence Stress Physics Particle and Nuclear Physics
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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