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Journal of the Korean Physical Society : Volume 64, Issue 4, February 2014

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Controlled aluminum-induced crystallization of an amorphous silicon thin film by using an oxide-layer diffusion barrier

Content Provider	Springer Nature Link
Author	Kwak, Hyunmin Kwon, Myeung Hoi Hwang, Ji Hyun
Copyright Year	2014
Abstract	Aluminum-induced crystallization (AIC) of amorphous silicon with an Al$_{2}$O$_{3}$ diffusion barrier was investigated for controlling Si crystallization and preventing layer exchange during the annealing process. An Al$_{2}$O$_{3}$ layer was deposited between the a-Si and the Al films (a-Si/Al$_{2}$O$_{3}$/Al/Glass) and was blasted with an air spray gun with alumina beads to form diffusion channels between the Si and the Al layers. During the annealing process, small grain Si$_{ x }$Al seeds were formed at the channels. Then, the Al$_{2}$O$_{3}$ diffusion barrier was restructured to close the channels and prevent further diffusion of Al atoms into the a-Si layer. A polycrystalline Si film with (111), (220) and (311) crystallization peaks in the X-ray diffraction pattern was formed by annealing at 560 °C in a conventional furnace. That film showed a p-type semiconducting behavior with good crystallinity and a large grain size of up to 14.8 µm. No layer conversion occurred between the Si and the Al layers, which had been the fundamental obstacle to the applications in the crystallization of a-Si films by using the AIC method.
Starting Page	679
Ending Page	683
Page Count	5
File Format	PDF
ISSN	03744884
Journal	Journal of the Korean Physical Society
Volume Number	64
Issue Number	5
e-ISSN	19768524
Language	English
Publisher	The Korean Physical Society
Publisher Date	2014-03-25
Publisher Place	Seoul
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Polycrystalline silicon film Al$_{2}$O$_{3}$ diffusion barrier Theoretical, Mathematical and Computational Physics AIC Physics Particle and Nuclear Physics Air blasting
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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