NDLI: A pilot investigation on laser annealing for thin-film solar cells: Crystallinity and optical properties of laser-annealed CdTe thin films by using an 808-nm diode laser

Content Provider	Springer Nature Link
Author	Park, Chan Il Kim, Nam Hoon Park, Jinseong
Copyright Year	2013
Abstract	Compared to conventional furnace and rapid thermal annealing, laser annealing for heterojunctioned thin-film solar cells has several advantages including excellent annealing selectivity to the under-layers with a localized high temperature for a short process time. A continuous wave 808-nm diode laser was used for the laser annealing process of CdTe thin films for various output powers. The grains in the laser-annealed CdTe thin films grew along the C (111), H (110), and C (311) planes. Laser annealing resulted in an increase in grain size and a decrease in surface roughness. The optical band gap energy of the CdTe thin films was affected directly by the grain size, showing 1.460 eV and 1.415 eV for the as-deposited and laser-annealed CdTe thin films, respectively. The absorbance of the CdTe thin films with better crystallinity showed an improved value of 99.5–99.9% in the visible spectral region after laser annealing at an output power of 0.91 W.
Starting Page	502
Ending Page	507
Page Count	6
File Format	PDF
ISSN	03744884
Journal	Journal of the Korean Physical Society
Volume Number	62
Issue Number	3
e-ISSN	19768524
Language	English
Publisher	The Korean Physical Society
Publisher Date	2013-02-22
Publisher Place	Seoul
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Theoretical, Mathematical and Computational Physics Laser annealing CdTe 808-nm diode laser Sputtering Physics Particle and Nuclear Physics
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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