NDLI: Carrier concentration-dependence of the Nottingham cooling of an n-type silicon semiconductor

Content Provider	Springer Nature Link
Author	Chung, Moon S. Choi, Jin Y. Yoon, Byung G.
Copyright Year	2015
Abstract	The authors investigated the Nottingham effect of an n-type silicon semiconductor cathode in a quest for a practical solid-state cooler. The dependence of field emission cooling on the carrier concentration n in the range from 10$^{15}$ to 10$^{20}$ cm $^{-3}$ was analyzed. The potential profile was obtained for a spherical tip with a radius R = 0.5 nm and was used to calculate the energy exchange Δε and the cooling power density Γ as a function of n and the temperature T. The energy exchange Δε was found to remain almost constant for 10$^{19}$ cm $^{-3}$ and decrease slowly as n further increased. In contrast, the current density j increased continuously with increasing n. As a result, the cooling power density Γ increased with increasing n, more rapidly at higher T. For n = 10$^{16}$, 10$^{18}$, and 10$^{20}$ cm $^{-3}$, a bias of V = 6.0 volts yields Γ = 0.49, 49, and 3202 watts/cm$^{2}$ at 600 K and 2.0, 201, and 16560 at watts/cm$^{2}$ at 900 K, respectively. This predicts a field emission cooling for micro-electronic devices even with a bias equivalent to several dry cells.
Starting Page	1824
Ending Page	1830
Page Count	7
File Format	PDF
ISSN	03744884
Journal	Journal of the Korean Physical Society
Volume Number	67
Issue Number	10
e-ISSN	19768524
Language	English
Publisher	The Korean Physical Society
Publisher Date	2015-11-29
Publisher Place	Seoul
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Energy Exchange Theoretical, Mathematical and Computational Physics Field emission Carrier Concentration Physics Particle and Nuclear Physics Nottingham cooling
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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