NDLI: Electroluminescence of n-Ge/i-Ge/p-Si heterojunction PIN LEDs

Content Provider	Springer Nature Link
Author	Kim, Taek Sung Shim, Kyu Hwan Jeong, Joo Yong Kil, Yeon Ho Kim, Joung Hee Jeong, Tae Soo Choi, Chel Jong Yang, Jong Han Kang, Sukill
Copyright Year	2014
Abstract	A PIN Light Emitting Diode (LED) was fabricated from the n-Ge/i-Ge/p-Si heterojunction structure grown by using Rapid Thermal Chemical Vapor Deposition (RTCVD). Ge buffer layers were grown at 350 °C with a thickness of ~110 nm in the first step. Then, high-temperature i-Ge layers were grown at 500 °C with a thickness of ~1.40 μm in the second step. The phosphorusdoped n-type Ge layers were grown at 500 °C with a thickness of ~0.61 µm in the third step. The surface morphology of the n-Ge/i-Ge layer was mirror like and the n-Ge/i-Ge layer was under a tensile strain of ~0.071%. Current-voltage characteristics of the PIN LED indicated a reasonable reverse saturation current of 140 μA at −1V. Electroluminescence characteristics showed a shift of the direct band gap to lower energies based on the depending of maximum peak position on the injection current. The direct band gap of the tensile-strained LEDs was found to be 0.746 eV.
Starting Page	1430
Ending Page	1436
Page Count	7
File Format	PDF
ISSN	03744884
Journal	Journal of the Korean Physical Society
Volume Number	64
Issue Number	10
e-ISSN	19768524
Language	English
Publisher	The Korean Physical Society
Publisher Date	2014-06-05
Publisher Place	Seoul
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Heterostructure Semiconductors RTCVD Theoretical, Mathematical and Computational Physics Electroluminescence Ge Physics Particle and Nuclear Physics PIN LED
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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