NDLI: Electrical characterization of MIS devices using PECVD SiN$_{ x }$:H films for application of silicon solar cells

Content Provider	Springer Nature Link
Author	Park, Joo Hyung Yoo, Jin Su Cho, Jun Sik Ahn, Seung Kyu Yoon, Kyung Hoon Shin, Kee Shik Yi, Junsin
Copyright Year	2012
Abstract	The surface passivation of crystalline silicon solar cells using plasma enhanced chemical vapor deposition (PECVD), hydrogenated, silicon-nitride (SiN$_{ x }$:H) thin films has become significant due to a low-temperature, low-cost and very effective defect passivation process. Also, a good quality antireflection coating can be formed. In this work, SiN$_{ x }$:H thin films were deposited by varying the gas ratio R (=NH$_{3}$/SiH$_{4}$+NH$_{3}$) and were annealed by rapid thermal processing (RTP). Metal-insulator-semiconductor (MIS) devices were fabricated using SiN$_{ x }$:H thin films as insulator layers and they were analyzed in the temperature range of 100–400 K by using capacitance-voltage (C-V) and current-voltage (I–V) measurements. The annealed SiN$_{ x }$:H thin films were evaluated by using the electrical properties at different temperature to determine the effect of surface passivation. We achieved an energy conversion efficiency of 18.1% under one-sun standard testing conditions for large-area (156 mm × 156 mm) crystalline-silicon solar cells.
Starting Page	89
Ending Page	92
Page Count	4
File Format	PDF
ISSN	03744884
Journal	Journal of the Korean Physical Society
Volume Number	61
Issue Number	1
e-ISSN	19768524
Language	English
Publisher	The Korean Physical Society
Publisher Date	2012-07-11
Publisher Place	Seoul
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Antire-flction coating Crystalline-silicon solar cell Theoretical, Mathematical and Computational Physics Silicon nitride PECVD MIS devices Surface passivation Physics Particle and Nuclear Physics
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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Fabrication and properties of silicon-nitride films deposited by using PECVD with a tris(dimethylamino)silane of aminosilane precursor

Subject: 2. Crystalline silicon solar cells and material technology emitter passivation properties of pecvd silicon nitride on silicon solar cells.

Design of porous silicon /PECVD SiO x and SiN x :H antireflection coatings for silicon solar cells

Progress with surface passivation of heavily doped n+ silicon by industrial PECVD SiNx films

Raman spectroscopy study of crystalline damage induced by PECVD SiN

Optimization of experimental study of PECVD SiN x to improve antireflection and passivation coating multicristalline silicon solar cells

Progress in Surface Passivation of Heavily Doped n-Type and p-Type Silicon by Plasma-Deposited AlO $_{bm x}$/SiN$_{bm x}$ Dielectric Stacks

Effects of plasma-enhanced chemical vapor deposition (PECVD) on the carrier lifetime of Al$_{2}$O$_{3}$ passivation stack

On the Surface Passivation of Textured C-Si by PECVD Silicon Nitride

Electrical characterization of MIS devices using PECVD SiN$_{ x }$:H films for application of silicon solar cells

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Fabrication and properties of silicon-nitride films deposited by using PECVD with a tris(dimethylamino)silane of aminosilane precursor

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