NDLI: Structural and electrical properties of LaMnO$_{3}$-doped BiFeO$_{3}$ thin film fabricated by using chemical solution deposition

Content Provider	Springer Nature Link
Author	Song, Tae Kwon Kim, Sang Su Do, Dalhyun Kim, Jin Won
Copyright Year	2012
Abstract	BiFeO$_{3}$ (BFO) and LaMnO$_{3}$-doped BiFeO$_{3}$ ((1−x)BiFeO$_{3−x }$LaMnO$_{3}$ (x = 0.1), (BLFMO)) thin films were fabricated on Pt(111)/Ti/SiO$_{2}$/Si(100) substrates by using a chemical solution deposition method. The coated films were annealed at 550 °C for 30 min under a nitrogen atmosphere. The BLFMO thin film exhibited good electrical properties, such as improved P-E hysteresis characteristics and leakage current density. The remnant polarization (2P $_{ r }$) and the coercive field (2E $_{ c }$) of the BLFMO thin film were 91 µC/cm$^{2}$ and 888 kV/cm at an applied electric field of 1190 kV/cm, respectively. The leakage current density of the BLFMO thin film was 2.6 ×10$^{−6}$ A/cm$^{2}$ at an applied electric field of 100 kV/cm. The improved leakage current and ferroelectric properties of the BLFMO thin film can be attributed to the changes in the microstructure and a reduction in the number of oxygen vacancies by (La,Mn)-co-doping.
Starting Page	198
Ending Page	202
Page Count	5
File Format	PDF
ISSN	03744884
Journal	Journal of the Korean Physical Society
Volume Number	60
Issue Number	2
e-ISSN	19768524
Language	English
Publisher	The Korean Physical Society
Publisher Date	2012-01-28
Publisher Place	Seoul
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Chemical solution deposition LaMnO$_{3}$-doped BiFeO$_{3}$ thin film Theoretical, Mathematical and Computational Physics Structural and electrical properties Particle and Nuclear Physics Physics
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Electrical properties of Dy, Mn Co-doped BiFeO$_{3}$ thin films prepared by using chemical solution deposition

Structure and electrical properties of (La, Zn) Co-doped BiFeO$_{3}$ thin films prepared by using chemical solution deposition

Enhancement of the electrical properties of (Eu,Zn) co-doped BiFeO$_{3}$ thin films prepared by using chemical solution deposition

Structure and electrical properties of BiFeO$_{3}$ thin films fabricated using chemical solution deposition and annealed in air, N$_{2}$ and O$_{2}$ atmospheres

Structural, electrical and optical properties of a Li-doped ZnO thin film fabricated on a Pt(111)/Ti/SiO$_{2}$/Si(100) substrate

Electrical properties of BiFeO$_{3}$ and (Bi$_{0.9}$Eu$_{0.1}$)(Fe$_{0.9}$Mn$_{0.1}$)O$_{3−δ }$ thin films

Effects of Ho- and Ni-doping alone and of co-doping on the structural and the electrical properties of BiFeO$_{3}$ thin films

Electrical and optical properties of nickel thin-films fabricated by using oblique-angle deposition

Structural, electrical, and multiferroic properties of Aurivillius (Bi$_{7−x }$La$_{ x }$)Fe$_{3}$Ti$_{3}$O$_{21}$ thin films

Structural and electrical properties of LaMnO$_{3}$-doped BiFeO$_{3}$ thin film fabricated by using chemical solution deposition

Similar Documents

Electrical properties of Dy, Mn Co-doped BiFeO$_{3}$ thin films prepared by using chemical solution deposition

Structure and electrical properties of (La, Zn) Co-doped BiFeO$_{3}$ thin films prepared by using chemical solution deposition

Enhancement of the electrical properties of (Eu,Zn) co-doped BiFeO$_{3}$ thin films prepared by using chemical solution deposition

Structure and electrical properties of BiFeO$_{3}$ thin films fabricated using chemical solution deposition and annealed in air, N$_{2}$ and O$_{2}$ atmospheres

Structural, electrical and optical properties of a Li-doped ZnO thin film fabricated on a Pt(111)/Ti/SiO$_{2}$/Si(100) substrate

Electrical properties of BiFeO$_{3}$ and (Bi$_{0.9}$Eu$_{0.1}$)(Fe$_{0.9}$Mn$_{0.1}$)O$_{3−δ }$ thin films

Effects of Ho- and Ni-doping alone and of co-doping on the structural and the electrical properties of BiFeO$_{3}$ thin films

Electrical and optical properties of nickel thin-films fabricated by using oblique-angle deposition

Structural, electrical, and multiferroic properties of Aurivillius (Bi$_{7−x }$La$_{ x }$)Fe$_{3}$Ti$_{3}$O$_{21}$ thin films

Structural and electrical properties of LaMnO$_{3}$-doped BiFeO$_{3}$ thin film fabricated by using chemical solution deposition