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| Content Provider | Springer Nature Link |
|---|---|
| Author | Suthagar, J. Sharli Nath, G. M. Suthan Kissinger, N. J. Perumal, K. |
| Copyright Year | 2014 |
| Abstract | ZnSe$_{1−x }$Te$_{ x }$ films with different tellurium (Te) contents were deposited by using an electron beam (EB) evaporation technique onto glass substrates for applications to optoelectronic devices. The structural and the optical properties of the ZnSe$_{1−x }$Te$_{ x }$ films were studied in the present work. The host material ZnSe$_{1−x }$Te$_{ x }$, were prepared by using the physical vapor deposition method of the electron beam evaporation technique (PVD: EBE) under a pressure of 1 × 10$^{−5}$ mbar. The X-ray diffractogram indicated that these alloy films had cubic structure with a strong preferential orientation of the crystallites along the (1 1 1) direction. The optical properties showed that the band gap (E$_{ g }$) values varied from 2.73 to 2.41 eV as the tellurium content varied from 0.2 to 0.8. Thus the material properties can be altered and excellently controlled by controlling the system composition x. |
| Starting Page | 58 |
| Ending Page | 62 |
| Page Count | 5 |
| File Format | |
| ISSN | 03744884 |
| Journal | Journal of the Korean Physical Society |
| Volume Number | 64 |
| Issue Number | 1 |
| e-ISSN | 19768524 |
| Language | English |
| Publisher | Springer Netherlands |
| Publisher Date | 2014-01-17 |
| Publisher Place | Dordrecht |
| Access Restriction | One Nation One Subscription (ONOS) |
| Subject Keyword | Zinc selenide zinc telluride electron beam evaporation optical properties Theoretical, Mathematical and Computational Physics Physics Particle and Nuclear Physics |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |
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