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Electronic Materials Letters : Volume 5

Dry etching of germanium using inductively coupled Ar/CCl$_{2}$F$_{2}$/Cl$_{2}$ plasma

Content Provider	Springer Nature Link
Author	Kim, Taek Sung Choi, Sang Sik Shin, Mi Im Jeong, Tae Soo Kang, Sukil Choi, Chel Jong Shim, Kyu Hwan
Copyright Year	2010
Abstract	In this study, the etch characteristics of Ge are investigated using inductively coupled Ar/CCl$_{2}$F$_{2}$/Cl$_{2}$ plasmas. The etch rate, surface morphology and subtended angle obtained with different etching conditions are presented. The etch rate of Ge increases from 374 Å/min to 520 Å/min as the ICP power increases from 400 to 700 W, whereas the etching rate of Ge decreases from 524 Å/min to 400 Å/min as CCl$_{2}$F$_{2}$ flow increases from 40 sccm to 80 sccm. In addition, the etching rate of Ge decreases from 467 Å/min to 400 Å/min as the Cl$_{2}$ flow increases from 0 sccm to 20 sccm. As the ICP power increases the subtended angle also increases. According to SEM imagery Ar/CCl$_{2}$F$_{2}$/Cl$_{2}$ICP etching leads to the presence of carbon-based material in the form of large particles.
Starting Page	35
Ending Page	39
Page Count	5
File Format	PDF
ISSN	17388090
Journal	Electronic Materials Letters
Volume Number	6
Issue Number	1
e-ISSN	20936788
Language	English
Publisher	Springer Netherlands
Publisher Date	2010-01-01
Publisher Place	Dordrecht
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	dry etching plasma ICP Germanium Optical and Electronic Materials Condensed Matter Physics Nanotechnology and Microengineering Characterization and Evaluation of Materials Nanotechnology
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials

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