NDLI: MOSFET dosimetry in-vivo at superficial and orthovoltage x-ray energies

Content Provider	Springer Nature Link
Author	Cheung, T. Butson, M. J. Yu, P. K. N.
Copyright Year	2003
Abstract	This note investigates in-vivo dosimetry using a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for radiotherapy treatment at superficial and orthovoltage x-ray energies. This was performed within one fraction of the patients treatment. Standard measurements along with energy response of the detector are given. Results showed that the MOSFET measurements in-vivo agreed with calculated results on average within ± 5.6% over all superficial and orthovoltage energies. These variations were slightly larger than TLD results with variations between measured and calculated results being ± 5.0% for the same patient measurements. The MOSFET device provides adequate in-vivo dosimetry for superficial and orthovoltage energy treatments with the accuracy of the measurements seeming to be relatively on par with TLD in our case. The MOSFET does have the advantage of returning a relatively immediate dosimetric result after irradiation.
Starting Page	81
Ending Page	83
Page Count	3
File Format	PDF
ISSN	01589938
Journal	Australasian Physics & Engineering Sciences in Medicine
Volume Number	26
Issue Number	2
e-ISSN	18795447
Language	English
Publisher	Springer Netherlands
Publisher Date	2003-01-01
Publisher Place	Dordrecht
Access Restriction	Subscribed
Subject Keyword	orthovoltage superficial x-rays MOSFET radiotherapy TLDs Biomedicine general Biophysics and Biological Physics Medical and Radiation Physics Biomedical Engineering Theoretical, Mathematical and Computational Physics
Content Type	Text
Resource Type	Article
Subject	Radiology, Nuclear Medicine and Imaging Physics and Astronomy Biophysics Biomedical Engineering

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