NDLI: Synthesis of polymetalloxanes and their properties as gate insulator for organic thin film transistors

Content Provider	Springer Nature Link
Author	Wang, Yuedan Lee, Kyungmin Oh, Jihong Kim, Sinhee Lee, Minkyu Kim, Hongdoo
Copyright Year	2012
Abstract	We report here the synthesis and dielectric properties of polymetalloxane dielectric materials for organic field-effect transistor applications. The gate insulators were obtained from polymetalloxanes by condensation polymerization of metal chelates and silicic acid. The solution shows an appreciable stability to self-condensation and a good coating quality. A high dielectric constant 6.16–8.27 was obtained for the prepared films. Organic thin film transistors with this gate dielectric were found to exhibit high performances, including carrier mobility as large as 1.77 cm$^{2}$/Vs, on-off current ratios above 1×10$^{4}$, threshold voltages below −0.13 V, and subthreshold swing as low as 0.1 V/decade. In addition, the operating voltage ranges as low as 5 volts was obtained.
Starting Page	899
Ending Page	904
Page Count	6
File Format	PDF
ISSN	15985032
Journal	Macromolecular Research
Volume Number	21
Issue Number	8
e-ISSN	20927673
Language	English
Publisher	The Polymer Society of Korea
Publisher Date	2012-12-29
Publisher Place	Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	organic thin film transistor (OTFTs) hybrid dielectrics polymetalloxane sol-gel process Polymer Sciences Soft and Granular Matter, Complex Fluids and Microfluidics Physical Chemistry Characterization and Evaluation of Materials Nanochemistry Nanotechnology
Content Type	Text
Resource Type	Article
Subject	Organic Chemistry Materials Chemistry Chemical Engineering Polymers and Plastics

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