NDLI: Transport mechanisms and interface properties of W/p-InP Schottky diode at room temperature

Content Provider	Springer Nature Link
Author	Sri Silpa, D. Sreehith, P. Rajagopal Reddy, V. Janardhanam, V.
Copyright Year	2015
Abstract	We have investigated the electrical properties and current transport mechanisms of W/p-InP Schottky diode using current–voltage (I–V), capacitance–voltage–frequency (C–V–f) and conductance–frequency (G–f) techniques at room temperature. The W/p-InP Schottky diode exhibits a good rectifying behavior. Measurements show that the Schottky barrier height (SBH) and ideality factor of the W/p-InP Schottky diode are 0.84 eV (I–V)/0.98 eV (C–V) and 1.24, respectively. Also, the SBH and series resistance R $_{s}$ of the diode are extracted by Cheung’s functions and the values are in good agreement with each other. Ohmic and space charge-limited conduction mechanisms are found to govern the current flow in the W/p-InP Schottky diode at low and high forward bias conditions, respectively. Experimental results reveal that the Poole–Frenkel mechanism is found to be dominant in the reverse bias region of W/p-InP Schottky diode. Further, the interface state density N $_{ss}$ and their relaxation times τ of the W/p-InP Schottky diode are estimated from the forward bias C–f and G–f characteristics and the values are in the range from 1.95 × 10$^{13}$ eV$^{−1}$ cm$^{−2}$ and 3.38 × 10$^{−5}$ s at (0.81-E $_{ V }$) eV to 1.78 × 10$^{13}$ eV$^{−1}$ cm$^{−2}$ and 2.78 × 10$^{−6}$ s at (0.30-E $_{ V }$) eV, respectively. Both the N $_{ss}$ and τ show an exponential rise with bias from the top of the valance band toward the mid gap.
Starting Page	399
Ending Page	406
Page Count	8
File Format	PDF
ISSN	09731458
Journal	Indian Journal of Physics
Volume Number	90
Issue Number	4
e-ISSN	09749845
Language	English
Publisher	Springer India
Publisher Date	2015-08-29
Publisher Place	New Delhi
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	p-InP Schottky contacts Electrical properties Current conduction mechanisms Interface state density Physics Astrophysics and Astroparticles
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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