NDLI: Vapour-phase graphene epitaxy at low temperatures

Content Provider	Springer Nature Link
Author	Zhang, Lianchang Shi, Zhiwen Liu, Donghua Yang, Rong Shi, Dongxia Zhang, Guangyu
Copyright Year	2012
Abstract	We report an epitaxial growth of graphene, including homo- and hetero-epitaxy on graphite and SiC substrates, at a temperature as low as ∼540 °C. This vapour-phase epitaxial growth, carried out in a remote plasma-enhanced chemical vapor deposition (RPECVD) system using methane as the carbon source, can yield large-area high-quality graphene with the desired number of layers over the entire substrate surfaces following an AB-stacking layer-by-layer growth model. We also developed a facile transfer method to transfer a typical continuous one layer epitaxial graphene with second layer graphene islands on top of the first layer with the coverage of the second layer graphene islands being 20% (1.2 layer epitaxial graphene) from a SiC substrate onto SiO$_{2}$ and measured the resistivity, carrier density and mobility. Our work provides a new strategy toward the growth of graphene and broadens its prospects of application in future electronics.
Starting Page	258
Ending Page	264
Page Count	7
File Format	PDF
ISSN	19980124
Journal	Nano Research
Volume Number	5
Issue Number	4
e-ISSN	19980000
Language	English
Publisher	Tsinghua Press
Publisher Date	2012-03-11
Publisher Place	Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Graphene epitaxial growth remote plasma-enhanced chemical vapor deposition (RPECVD) highly ordered pyrolytic graphite (HOPG) SiC transfer mobility Biomedicine general Atomic/Molecular Structure and Spectra Materials Science Nanotechnology Biotechnology Condensed Matter Physics
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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