NDLI: Prediction of phonon and electron contributions to thermal conduction in doped silicon films

Content Provider	Springer Nature Link
Author	Jin, Jae Sik
Copyright Year	2014
Abstract	The modified electron-phonon interaction model is proposed, and the relative contributions of phonons and electrons to the thermal conduction in doped silicon films are investigated quantitatively. The carrier contributions in sub-micro scale heat conduction are validated by an order of magnitude analysis and comparison with previous data. The simulation results show that the electron contribution in Si-layer is not negligible when the doping concentration is higher than 10$^{19}$ cm$^{−3}$, which can be classified as semimetal or metal by the value of its electrical resistivity at 300 K. The electron thermal conductivity increases with increasing doping density, and its fraction is about 57.2% of the total thermal conductivity when the doping concentration is 5.0 × 10$^{20}$ cm$^{−3}$ and silicon film thickness 100 nm.
Starting Page	2287
Ending Page	2292
Page Count	6
File Format	PDF
ISSN	1738494X
Journal	Journal of Mechanical Science and Technology
Volume Number	28
Issue Number	6
e-ISSN	19763824
Language	English
Publisher	Korean Society of Steel Construction
Publisher Date	2014-06-14
Publisher Place	Seoul
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Electron-phonon interaction Thermal contribution Silicon film Boltzmann transport equation Mechanical Engineering Vibration, Dynamical Systems, Control Industrial and Production Engineering
Content Type	Text
Resource Type	Article
Subject	Mechanics of Materials Mechanical Engineering

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