NDLI: Laser annealing of SiO$_{2}$ film deposited by ICPECVD for fabrication of silicon based low loss waveguide

Content Provider	Springer Nature Link
Author	Wang, Ya’nan Luo, Yi Sun, Changzheng Xiong, Bing Wang, Jian Hao, Zhibiao Han, Yanjun Wang, Lai Li, Hongtao
Copyright Year	2016
Abstract	Laser annealing of silicon dioxide (SiO$_{2}$) film formed by inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) is studied for the fabrication of low loss silicon based waveguide. The influence of laser annealing on ICPECVD-deposited SiO$_{2}$ film is investigated. The surface roughness, refractive index, and etch rate of annealed samples are compared with those of SiO$_{2}$ film obtained by thermal oxidation. It is demonstrated that the performance of ICPECVD-deposited SiO$_{2}$ film can be significantly improved by laser annealing. Al$_{2}$O$_{3}$/SiO$_{2}$ waveguide has been fabricated on silicon substrate with the SiO$_{2}$ lower cladding formed by ICPECVD and laser annealing process, and its propagation loss is found to be comparable with that of the waveguide with thermally oxidized lower cladding.
Starting Page	323
Ending Page	329
Page Count	7
File Format	PDF
ISSN	20952759
Journal	Frontiers of Optoelectronics
Volume Number	9
Issue Number	2
e-ISSN	20952767
Language	English
Publisher	Higher Education Press
Publisher Date	2016-03-29
Publisher Institution	Chinese Universities
Publisher Place	Beijing
Access Restriction	Subscribed
Subject Keyword	laser annealing waveguide loss silicon dioxide inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) Electrical Engineering Physics Biomedical Engineering
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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