NDLI: Design, fabrication, testing and packaging of a silicon micromachined radio frequency microelectromechanical series (RF MEMS) switch

Content Provider	Springer Nature Link
Author	GIRIDHAR, M S JAMBHALIKAR, ASHWINI JOHN, JIJU BEHERA, ANANDA NAGENDRA, C L THACHIL, GEORGE SRIKANTH, M P SOMANI, SHAILESH DARUKESHA, B H M BOLLU, SRINIVASARAO
Copyright Year	2013
Abstract	RF characterization and packaging of a single pole single throw (SPST) direct contact microelectromechanical (MEMS) series radio frequency (RF) switch is reported. Precise thickness of the silicon MEMS structure is achieved using a specially developed silicon Deep Reactive Ion Etching (DRIE) thinning process. A stress free release process is employed which ensures a high yield of released microstructures. The design of the device is based on stiffness equations derived from first principles. Displacement of the actuator under applied field is measured to confirm electrostatic pull in, which occurs in the 30–50 V range. The variation of contact resistance with time has been measured and is found to have a power law decay, in agreement with theoretical models. At the bare die level the insertion loss, return loss and the isolation of the switch were measured to be −0.43 dB, −25 dB and −21 dB, respectively at 10 GHz. The devices were packaged in commercially available RF packages and mounted in alumina boards for post package characterization. Due to the presence of bond wires in the signal path of the packaged devices, the RF performance was found to degrade at high frequencies. However, losses were measured to be at acceptable levels up to 2 GHz. Factors contributing to insertion loss at the die and package device levels are discussed in detail with possible solutions.
Starting Page	297
Ending Page	316
Page Count	20
File Format	PDF
ISSN	02562499
Journal	Sadhana
Volume Number	38
Issue Number	2
e-ISSN	09737677
Language	English
Publisher	Springer-Verlag
Publisher Date	2013-05-04
Publisher Place	India
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	RF MEMS switch bulk silicon micromachining wafer level RF measurements RF device packaging Engineering
Content Type	Text
Resource Type	Article
Subject	Multidisciplinary

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
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