NDLI: Nd$^{3+}$:GGG and Cr$^{4+}$:GGG epitaxial films for neodymium lasers

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Nd$^{3+}$:GGG and Cr$^{4+}$:GGG epitaxial films for neodymium lasers

Content Provider	Springer Nature Link
Author	Bufetova, G. A. Gusev, M. Yu. Ivav, I. A. Neustroev, N. S. Nikolaev, D. A. Seregin, V. F. Tsvetkov, V. B. Shcherbakov, I. A.
Copyright Year	2009
Abstract	An efficient technology was developed for growing the gadolinium gallium garnet (GGG) single-crystal films doped with Nd$^{3+}$ or Cr and Ca ions. The films with thickness up to 100 µm have been grown by liquid-phase epitaxy method on undoped GGG substrates of small and big sizes (5–8 mm and up to 76 mm in diameter, respectively). The dependence of absorption, luminescence spectra and optical losses at the wavelength of 1 µm on growth temperature and melt-solution composition was studied. We demonstrated that Cr$^{4+}$ centers have been implemented in epitaxial films and these films may be used as passive Q-switches for laser systems.
Starting Page	77
Ending Page	91
Page Count	15
File Format	PDF
ISSN	1541308X
Journal	Physics of Wave Phenomena
Volume Number	17
Issue Number	2
e-ISSN	1934807X
Language	English
Publisher	Allerton Press, Inc.
Publisher Date	2009-05-27
Publisher Place	Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Semiconductor lasers; laser diodes Q-switching Laser materials Liquid phase epitaxy; deposition from liquid phases Acoustics Quantum Optics, Quantum Electronics, Nonlinear Optics
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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