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MIS photodiode with an InAs-based tunnel-transparent oxide layer

Content Provider	Springer Nature Link
Author	Kesler, V. G. Guzev, A. A. Kovchavtsev, A. P. Tsarenko, A. V. Pava, Z. V.
Copyright Year	2014
Abstract	Results of studying the possibilities of passivating InAs surfaces by ultrathin oxide films (∼3 nm) in a glow-discharge plasma and producing tunnel MIS photodiodes on this basis are presented together with results of investigating the kinetics of oxidation and the chemical composition of oxide films formed. This is the first time when anhysteretic dependences of the capacitance on the bias are observed for InAs-based MIS structures at the liquid nitrogen temperature in a wide field range (from −7 · 10$^{6}$ to +5 · 10$^{6}$ V/cm). MIS structures are IR-photosensitive in the current mode. The estimated values of detectability are D* = 2.6·10$^{12}$–8.2·10$^{12}$ cm·Hz$^{1/2}$·W$^{−1}$ and D* = 1.5·10$^{11}$ cm·Hz$^{1/2}$·W$^{−1}$ at temperatures of 78 and 198 K, respectively. The ampere-watt sensitivity value at a temperature of 78 K is 0.98 A/W, and the quantum efficiency is 0.43 (with no antireflecting coating of the InAs substrate and sapphire window).
Starting Page	87
Ending Page	95
Page Count	9
File Format	PDF
ISSN	87566990
Journal	Optoelectronics, Instrumentation and Data Processing
Volume Number	50
Issue Number	1
e-ISSN	19347944
Language	English
Publisher	Springer US
Publisher Date	2014-03-27
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	indium arsenide thin films glow-discharge plasma oxidation tunnel MIS photodiode Optics, Optoelectronics, Plasmonics and Optical Devices
Content Type	Text
Resource Type	Article
Subject	Instrumentation Condensed Matter Physics Electrical and Electronic Engineering

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