NDLI: A method of dopant electron energy spectrum parameterization for calculation of single-electron nanodevices

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A method of dopant electron energy spectrum parameterization for calculation of single-electron nanodevices

Content Provider	Springer Nature Link
Author	Shorokhov, V. V.
Copyright Year	2017
Abstract	Solitary dopants in semiconductors and dielectrics that possess stable electron structures and interesting physical properties may be used as building blocks of quantum computers and sensor systems that operate based on new physical principles. This study proposes a phenomenological method of parameterization for a single-particle energy spectrum of dopant valence electrons in crystalline semiconductors and dielectrics that takes electron–electron interactions into account. It is proposed to take electron–electron interactions in the framework of the outer electron shell model into account. The proposed method is applied to construct the procedure for the determination of the effective dopant outer shell capacity and the method for calculation of the tunneling current in a single-electron device with one or several active dopants–charge centers.
Starting Page	279
Ending Page	286
Page Count	8
File Format	PDF
ISSN	00271349
Journal	Moscow University Physics Bulletin
Volume Number	72
Issue Number	3
e-ISSN	19348460
Language	English
Publisher	Allerton Press
Publisher Date	2017-07-23
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	single-atom single-electron transistor dopants Theoretical, Mathematical and Computational Physics
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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