NDLI: Electrical characterization of C-coated nickel silicide nanowires grown on Ni-loaded Si substrate

Content Provider	Springer Nature Link
Author	Lee, Kyung Sun Lee, Seung Hyun Mo, Young Hwan Nahm, Kee Suk Kim, Ju Jin Lee, Choong Hun
Copyright Year	2004
Abstract	Carbon-coated nickel silicide nanowires (C-coated NiSi NWs) were grown in a home-made chemical vapor deposition (CVD) reactor. The coating of semiconductor or metal nanowires with nano-sized carbon layer is effective to prevent the oxidation of the nanowires, resulting in the stabilization of electrical properties of nanodevices. The growth of the NiSi nanowires and the coating of the NWs with carbon layers simultaneously took place in the reaction. The current-voltage curve of individual NiSi nanowire showed highly linear behavior, indicating the good ohmic contact without the insulating layer. The resistivity of the NiSi nanowire was about 370 ΜΩ-cm at room temperature, decreased monotonically as the temperature was lowered, and became saturated at low temperatures, indicating the growth of metallic NiSi nanowires. Field emission measurements showed that the C-coated NiSi nanowires were an excellent field emitter with large emission current densities at very low electric field.
Starting Page	1240
Ending Page	1244
Page Count	5
File Format	PDF
ISSN	02561115
Journal	Korean Journal of Chemical Engineering
Volume Number	21
Issue Number	6
e-ISSN	19757220
Language	English
Publisher	Springer-Verlag
Publisher Date	2004-01-01
Publisher Place	Berlin, Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	C-coated NiSi Nanowires Catalytic CVD Growth Electrical Properties of Nanowires Industrial Chemistry/Chemical Engineering Catalysis Materials Science Biotechnology
Content Type	Text
Resource Type	Article
Subject	Chemistry Chemical Engineering

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