NDLI: Er$^{3+}$-activated silica inverse opals synthesized by the solgel method

Content Provider	Springer Nature Link
Author	Chiappini, A. Armellini, C. Chiasera, A. Jestin, Y. Ferrari, M. Mattarelli, M. Montagna, M. Moser, E. Tosello, C. Zampedri, L. Nunzi Conti, G. Pelli, S. Almeida, R. M. Righini, G. C.
Copyright Year	2007
Abstract	We present the details of the sol-gel processing used to realize inverse silica opal, where the silica was activated with 0.3 mol% of Er$^{3+}$ ions. The template (direct opal) was obtained assembling polystyrene spheres of the dimensions of 260 nm by means of a vertical deposition technique. The Er$^{3+}$-activated silica inverse opal was obtained infiltrating, into the void of the template, the silica sol doped with Er$^{3+}$ ions and subsequently removing the polystyrene spheres by means of calcinations. Scanning electron microscope showed that the inverse opals possess a fcc structure with a air hollows of about 210 nm and a photonic band gap, in the visible range, was observed from reflectance measurements. Spectroscopic properties of Er$^{3+}$-activated silica inverse opal were investigated by luminescence spectroscopy, where, upon excitation at 514.5 nm, an emission of $^{4}$I$_{13/2}$ → $^{4}$I$_{15/2}$ of Er$^{3+}$ ions transition with a 21 nm bandwidth was observed. Moreover the $^{4}$I$_{13/2}$ level decay curve presents a single-exponential profile, with a measured lifetime of 18 ms, corresponding a high quantum efficiency of the system.
Starting Page	184
Ending Page	187
Page Count	4
File Format	PDF
ISSN	16731905
Journal	Optoelectronics Letters
Volume Number	3
Issue Number	3
e-ISSN	19935013
Language	English
Publisher	Tianjin University of Technology
Publisher Date	2007-01-01
Publisher Place	Tianjin
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Applied Optics, Optoelectronics, Optical Devices
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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