NDLI: Internal stress in MPCVD diamond films on the Si substrate based on XRD line shape

Content Provider	Springer Nature Link
Author	Li, Xiao wei Li, Cui ping Gao, Cheng yao Huang, Meng xue Yang, Bao he
Copyright Year	2009
Abstract	The diamond films adherent to Si substrate are deposited with the microwave plasma CVD (MPCVD) at microwave powers of 6000 W and 4000 W from 6 h to 10 h, respectively, the internal stresses of the films are measured by XRD. Spectral peak shift and widening are applied to calculate the magnitudes of macro and micro stresses. The results show that the macro stress is tensile. The internal stress can be controlled by the microwave power. With the microwave power increasing, the intrinsic and macro stresses decrease, and the micro stress increases significantly. Also, it can be found that the macro and micro stresses increase with deposited time when the other conditions are the same.
Starting Page	273
Ending Page	275
Page Count	3
File Format	PDF
ISSN	16731905
Journal	Optoelectronics Letters
Volume Number	5
Issue Number	4
e-ISSN	19935013
Language	English
Publisher	Tianjin University of Technology
Publisher Date	2009-08-12
Publisher Place	Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Applied Optics, Optoelectronics, Optical Devices
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Internal stress in MPCVD diamond films on the Si substrate based on XRD line shape