NDLI: Fabrication and characterization of 1 550 nm polarization-insensitive semiconductor optical amplifiers

Content Provider	Springer Nature Link
Author	Hu, Yong hong Huang, Yong zhen Yu, Li juan Chen, Qin Tan, Man qing Ma, Xiao yu
Copyright Year	2006
Abstract	A 1550 nm polarization-insensitive semiconductor optical amplifier (SOA) was fabricated with InGaAs tensile-strained bulk active region. Beam propagation method and planar wave expansion method are used to calculate the mode field profile and the mode reflectivity. For the SOA with a buried waveguide deviated 7$^{0}$ from the normal direction of cleaved mirrors, the thickness tolerance of the mirror is 3% for keeping the reflectivity of TE mode and TM mode less than 10$^{−4}$ simultaneously. For a SOA with a cavity length of 800 μm, the polarization sensitivity of amplified spontaneous emission spectra is less than 0.5 dB at an injection current of 250 mA, the corresponding fiber-to-fiber gain is 11.9 dB at 1550 nm with a 3 dB bandwidth of 63 nm, and the saturation output power is 5.6 dBm. The noise figure shows 8.8 and 7.8 dB at 1550 and 1570 nm, respectively. For a packaged SOA with a cavity length of 1000 μm, the fiber-to-fiber gain is 15 dB at an injection current of 190 mA.
Starting Page	351
Ending Page	353
Page Count	3
File Format	PDF
ISSN	16731905
Journal	Optoelectronics Letters
Volume Number	2
Issue Number	5
e-ISSN	19935013
Language	English
Publisher	Tianjin University of Technology
Publisher Date	2006-01-01
Publisher Place	Tianjin
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Applied Optics, Optoelectronics, Optical Devices
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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