NDLI: Effects of Mg-doping concentration on the characteristics of InGaN based solar cells

Content Provider	Springer Nature Link
Author	Lu, Gang Wang, Bo Ge, Yun wang
Copyright Year	2015
Abstract	A major challenge in GaN based solar cell design is the lack of holes compared with electrons in the multiple quantum wells (MQWs). We find that GaN based MQW photovoltaic devices with five different Mg-doping concentrations of 0 cm$^{−3}$, 5×1017 cm$^{−3}$, 2×10$^{18}$ cm$^{−3}$, 4×10$^{18}$ cm$^{−3}$ and 7×10$^{18}$ cm$^{−3}$ in GaN barriers can lead to different hole concentrations in quantum wells (QWs). However, when the Mg-doping concentration is over 1×10$^{18}$ cm$^{−3}$, the crystal quality degrades, which results in the reduction of the external quantum efficiency (EQE), short circuit current density and open circuit voltage. As a result, the sample with a slight Mg-doping concentration of 5×10$^{17}$ cm$^{−3}$ exhibits the highest conversion efficiency.
Starting Page	348
Ending Page	351
Page Count	4
File Format	PDF
ISSN	16731905
Journal	Optoelectronics Letters
Volume Number	11
Issue Number	5
e-ISSN	19935013
Language	English
Publisher	Tianjin University of Technology
Publisher Date	2015-09-05
Publisher Place	Tianjin
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optics, Optoelectronics, Plasmonics and Optical Devices
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Effects of Mg-doping concentration on the characteristics of InGaN based solar cells