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Characterization of foreign grain on 6H-SiC facet

Content Provider	Springer Nature Link
Author	Wang, Ying min Li, Juan Ning, Li na Gao, Yu qiang Hu, Xiao bo Xu, Xian gang
Copyright Year	2009
Abstract	6H-SiC single crystals were grown by sublimation method. It is found that foreign grains occur frequently on the facets of the crystals. To characterize the foreign grain, a longitudinal and a sectional cut samples were prepared by standard mechanical processing method. Raman spectrum confirms that the foreign grain is actually a mis-oriented 6H-SiC grain. The surface structure of the foreign grain was studied by chemical etching and optical microscopy. It is shown that etch pits in foreign grain region take the shape of isosceles triangle, which are different from those in mono-crystalline region, and high density stacking faults are observed on the surface of the foreign grain. The orientation of foreign grain surface is determined to be (10 $$ \bar 1 $$ 4) plane by back-scattering X-ray Laue image. The X-ray powder diffraction reveals that the powder is partly graphitized after a long crystal growth run. Therefore it is believed that the loss of Si results in the formation of C inclusions, which is responsible for the nucleation of foreign grain in the facet region.
Starting Page	344
Ending Page	348
Page Count	5
File Format	PDF
ISSN	10059784
Journal	Journal of Central South University of Technology
Volume Number	16
Issue Number	3
e-ISSN	19930666
Language	English
Publisher	Central South University
Publisher Date	2009-06-09
Publisher Place	Heidelberg
Access Restriction	Subscribed
Subject Keyword	6H-SiC surface morphology foreign grain sublimation method Metallic Materials Engineering
Content Type	Text
Resource Type	Article
Subject	Mechanics of Materials Materials Science Mechanical Engineering

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