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Frontiers of Energy and Power Engineering in China : Volume 10

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Laser enhanced gettering of silicon substrates

Content Provider	Springer Nature Link
Author	Chen, Daniel Edwards, Matthew Wenham, Stuart Abbott, Malcolm Hallam, Brett
Copyright Year	2017
Abstract	One challenge to the use of lightly-doped, high efficiency emitters on multicrystalline silicon wafers is the poor gettering efficiency of the diffusion processes used to fabricate them. With the photovoltaic industry highly reliant on heavily doped phosphorus diffusions as a source of gettering, the transition to selective emitter structures would require new alternative methods of impurity extraction. In this paper, a novel laser based method for gettering is investigated for its impact on commercially available silicon wafers used in the manufacturing of solar cells. Direct comparisons between laser enhanced gettering (LasEG) and lightly-doped emitter diffusion gettering demonstrate a 45% absolute improvement in bulk minority carrier lifetime when using the laser process. Although grain boundaries can be effective gettering sites in multicrystalline wafers, laser processing can substantially improve the performance of both grain boundary sites and intra-grain regions. This improvement is correlated with a factor of 6 further decrease in interstitial iron concentrations. The removal of such impurities from multicrystalline wafers using the laser process can result in intra-grain enhancements in implied open-circuit voltage of up to 40 mV. In instances where specific dopant profiles are required for a diffusion on one surface of a solar cell, and the diffusion process does not enable effective gettering, LasEG may enable improved gettering during the diffusion process.
Starting Page	23
Ending Page	31
Page Count	9
File Format	PDF
ISSN	20951701
Journal	Frontiers of Energy and Power Engineering in China
Volume Number	11
Issue Number	1
e-ISSN	20951698
Language	English
Publisher	Higher Education Press
Publisher Date	2016-11-19
Publisher Institution	Chinese Universities
Publisher Place	Beijing
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	gettering multicystaline silicon impurities laser doping Energy Technology
Content Type	Text
Resource Type	Article
Subject	Energy Engineering and Power Technology

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