NDLI: Thermal and chemical passivation of gallium-arsenide films deposited from ablation plasma

Content Provider	Springer Nature Link
Author	Kabyshev, A. V. Konusov, F. V. Remnev, G. E.
Copyright Year	2014
Abstract	The electric and photoelectric properties of gallium-arsenide films deposited on a polycrystalline corundum substrate from the ablation plasma formed by a high-power ion beam are investigated. It is ascertained that vacuum and air annealing (in the former case, P = 10$^{−2}$ Pa and T = 300–1200 K) and sulfide chemical passivation in an alcoholic solution affect the characteristics of the dark conductivity and photo-conductivity of the film surfaces. The optimal conditions for thermal and chemical treatment, at which the most stable changes in film the properties are attained, are determined. Enhancement in the stability of the electrical and photoelectric characteristics of films, which is achieved after thermal treatment, arises from the annealing of defects and their clusterization. Sulfide passivation leads to changes in the characteristics and increases the stability of properties under air oxidation.
Starting Page	158
Ending Page	163
Page Count	6
File Format	PDF
ISSN	10274510
Journal	Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
Volume Number	8
Issue Number	1
e-ISSN	18197094
Language	English
Publisher	Pleiades Publishing
Publisher Date	2014-02-14
Publisher Place	Moscow
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Surfaces and Interfaces, Thin Films
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Surfaces, Coatings and Films

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Properties of calcium phosphate coatings deposited by high-power ion beam ablation plasma

Optical properties of GaAs films deposited via pulsed ion ablation

Nanosize layers of silicon and manganese ferromagnetic alloys deposited from laser plasma

The effect of different treatments on fractal forms of gallium arsenide surface

Nanoscale peculiarities of the thermally stimulated surface autosegregation of covalent crystals: Gallium arsenide

Nanostructure of laser-deposited palladium thin films on different substrates

Heterosegregation on the surface of a gallium arsenide single crystal: Gallium nitride phase formation in nitrogen- and argon-gas flows

Structure and composition of chemically deposited In$_{2}$S$_{3}$ thin films

Electronic and optical characteristics of thin hexagonal gallium nitride films specified by surfaces

Thermal and chemical passivation of gallium-arsenide films deposited from ablation plasma

Similar Documents

Properties of calcium phosphate coatings deposited by high-power ion beam ablation plasma

Optical properties of GaAs films deposited via pulsed ion ablation

Nanosize layers of silicon and manganese ferromagnetic alloys deposited from laser plasma

The effect of different treatments on fractal forms of gallium arsenide surface

Nanoscale peculiarities of the thermally stimulated surface autosegregation of covalent crystals: Gallium arsenide

Nanostructure of laser-deposited palladium thin films on different substrates

Heterosegregation on the surface of a gallium arsenide single crystal: Gallium nitride phase formation in nitrogen- and argon-gas flows

Structure and composition of chemically deposited In$_{2}$S$_{3}$ thin films

Electronic and optical characteristics of thin hexagonal gallium nitride films specified by surfaces

Thermal and chemical passivation of gallium-arsenide films deposited from ablation plasma