NDLI: AlGaN/AlN-GaN-SL HEMTs with Multiple 2DEG Channels

Content Provider	Springer Nature Link
Author	Wille, Ada Yacoub, Hady Debald, Arne Kalisch, Holger Vescan, Andrei
Copyright Year	2014
Abstract	We report on a multichannel approach for AlGaN/GaN high-electron-mobility transistors (HEMTs) to increase the carrier mobility in the low and high sheet carrier concentration regimes. Between the AlGaN barrier and GaN buffer, alternating thin layers of AlN and GaN were inserted to create multiple two-dimensional electron gas (2DEG) channels. All samples were grown by metalorganic vapor-phase epitaxy (MOVPE) on sapphire substrates and compared with conventional single-channel HEMT with the same sheet carrier concentration. For low total 2DEG carrier concentrations (<8 × 10$^{12}$ cm$^{−2}$), the mobility for the multichannel HEMT was enhanced due to a reduction of ionized impurity and dislocation scattering, which originates from a backbarrier effect of the underlying AlN layers. In the high total carrier concentration regime (>8 × 10$^{12}$ cm$^{−2}$), a mobility improvement is attributed to distribution of the sheet charge into multiple 2DEG channels. This has been found to reduce the carrier concentration per individual channel, which leads to larger distance between 2DEG and heterointerfaces and therefore less impact of interface roughness and alloy scattering. With increasing number of channels, phonon scattering is also reduced due to lowering of the three-dimensional (3D) electron density, which results from the added volume of the multiple 2DEGs. With this approach, the HEMT mobility was increased from 1620 cm$^{2}$ V$^{−1}$ s$^{−1}$ to 1960 cm$^{2}$ V$^{−1}$ s$^{−1}$ for a triple-channel device at sheet carrier concentration of 7.5 × 10$^{12}$ cm$^{−2}$.
Starting Page	1263
Ending Page	1267
Page Count	5
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	44
Issue Number	5
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2014-11-13
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	GaN HEMT MOVPE carrier mobility multiple-channel transistors Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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