NDLI: Relationships Between Strain and Recombination in Intermediate Growth Stages of GaN

Content Provider	Springer Nature Link
Author	Arnatkevičiūtė, A. Reklaitis, I. Kadys, A. Malinauskas, T. Stanionytė, S. Juška, G. Rzheutski, M. V. Tomašiūnas, R.
Copyright Year	2014
Abstract	Using metalorganic chemical vapor deposition, we heteroepitaxially grew undoped gallium nitride epilayers on sapphire. Assessing the epilayers at different growth stages, we investigated changes in epilayer strain and the lifetime of minority nonequilibrium charge carriers. The in-plane compressive strain was evaluated by x-ray diffraction and bandgap photoluminescence. The epilayer thickness ranged from 200 nm (islets) to 3.5 μm (continuous structure). The carrier lifetimes, measured using a light-induced transient grating technique, revealed a correlation between strain and the density of edge-type threading dislocations. This dislocation density was 10$^{9}$ cm$^{−2}$ to 10$^{11}$ cm$^{−2}$, corresponding to the dominant mechanism for nonradiative carrier recombination. How the carrier lifetime depended on the growth stage differed between the surface and interfacial measurements. On the surface side, the carrier lifetime increased monotonically up to ~500 ps with thickness; on the interface side, the lifetime changed little with thickness, except in the thickest sample, where the carrier lifetime increased with thickness. We attributed this behavior to defect healing aided by long-term annealing, leading to mutual lateral motion and annihilation of mixed threading dislocations.
Starting Page	2667
Ending Page	2675
Page Count	9
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	43
Issue Number	7
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2014-04-03
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Gallium nitride sapphire dislocation strain bandgap lifetime Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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