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| Content Provider | Springer Nature Link |
|---|---|
| Author | Markunas, J. K. Almeida, L. A. Jacobs, R. N. Pellegri, J. Qadri, S. B. Mahadik, N. Sanghera, J. |
| Copyright Year | 2010 |
| Abstract | Large-area high-quality Hg$_{1–x }$Cd$_{x}$Te sensing layers for infrared imaging in the 8 μm to 12 μm spectral region are typically grown on bulk Cd$_{1–x }$Zn$_{x}$Te substrates. Alternatively, epitaxial CdTe grown on Si or Ge has been used as a buffer layer for high-quality epitaxial HgCdTe growth. In this paper, x-ray topographs and rocking-curve full-width at half-maximum (FWHM) data will be presented for recent high-quality bulk CdZnTe grown by the vertical gradient freeze (VGF) method, previous bulk CdZnTe grown by the vertical Bridgman technique, epitaxial CdTe buffer layers on Si and Ge, and a HgCdTe layer epitaxially grown on bulk VGF CdZnTe. |
| Starting Page | 738 |
| Ending Page | 742 |
| Page Count | 5 |
| File Format | |
| ISSN | 03615235 |
| Journal | Journal of Electronic Materials |
| Volume Number | 39 |
| Issue Number | 6 |
| e-ISSN | 1543186X |
| Language | English |
| Publisher | Springer US |
| Publisher Date | 2010-03-14 |
| Publisher Place | Boston |
| Access Restriction | One Nation One Subscription (ONOS) |
| Subject Keyword | CdZnTe HgCdTe CdTe x-ray topography x-ray diffraction infrared Solid State Physics Electronics and Microelectronics, Instrumentation Characterization and Evaluation of Materials Optical and Electronic Materials |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
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