NDLI: Effect of UV light irradiation on SiC dry etch rates

Content Provider	Springer Nature Link
Author	Leerungnawarat, P. Cho, H. Pearton, S. J. Zetterling, C. M. Ostling, M.
Copyright Year	2000
Abstract	Inductively Coupled Plasma etching of 4H-SiC under ultraviolet illumination was examined for SF$_{6}$/Ar and Cl$_{2}$/Ar chemistries. Etch rate enhancements up to a factor of 8 were observed with UV light irradiation during Cl$_{2}$/Ar etching. The enhancement mechanism is related to photodesorption of SiCl$_{x}$ and CCl$_{x}$ species. Surface morphologies were unchanged as a result of the UV enhancement with Cl$_{2}$/Ar discharges. By contrast, there was no effect of UV irradiation on the SiC etch rates in SF$_{6}$/Ar plasmas, but the surfaces were typically smoother than those obtained without the ultraviolet illumination. In the SF$_{6}$/Ar chemistry the rate-limiting steps are either Si-C bond-breaking or supply of fluorine radicals to the surface, and not desorption of the SiF$_{x}$ and CF$_{x}$ etch products.
Starting Page	342
Ending Page	346
Page Count	5
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	29
Issue Number	3
e-ISSN	1543186X
Language	English
Publisher	Springer-Verlag
Publisher Date	2000-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Plasma etching inductively coupled plasma 4H-SiC ultraviolet illumination via holes Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics and Spectroscopy
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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