NDLI: Refractory metal boride ohmic contacts to P-type 6H-SiC

Content Provider	Springer Nature Link
Author	Oder, T. N. Williams, J. R. Mohney, S. E. Crofton, J.
Copyright Year	1998
Abstract	Ohmic contacts have been fabricated on p-type 6H-SiC (1.3×10$^{19}$ cm$^{−3}$) using CrB$_{2}$, W$_{2}$B, and TiB$_{2}$. The boride layers (∼100–200 nm) were sputter-deposited in a system with a base pressure of 3×10$^{−7}$ Torr. Specific contact resistances were measured using the linear transmission line method, and the physical properties of the contacts were examined using Rutherford backscattering spectrometry. All as-deposited contacts exhibited rectifying characteristics. Ohmic behavior was observed following short anneals (2–10 min) at 1100°C and 5×10$^{−7}$ Torr. Current-voltage characteristics were linear for CrB$_{2}$ and W$_{2}$B and quasi-linear for TiB$_{2}$. The lowest values of the specific contact resistance (r$_{c}$ in Ω-cm$^{2}$) measured at room temperature for CrB$_{2}$ and W$_{2}$B were 8.2×10$^{−5}$ and 5.8×10$^{−5}$, respectively. The specific contact resistance for TiB$_{2}$ was not determined accurately. Longer anneals (30 min for W$_{2}$B and 90 min for CrB$_{2}$) reduced the room temperature values of r$_{c}$ to 6.1×10$^{−5}$ for W$_{2}$B and 1.9×10$^{−5}$ for CrB$_{2}$. Backscattering spectra revealed substantial concentrations of oxygen in all as-deposited boride films. The short anneal cycle removed the oxygen in the CrB$_{2}$ films and reduced the concentration substantially in the W$_{2}$B films; however, annealing had no affect on the oxygen concentration in the TiB$_{2}$ films. The CrB$_{2}$/SiC interface remained stable during annealing; i.e., Si and carbon were not observed in the boride layers after annealing. In contrast, W$_{2}$B and TiB$_{2}$ reacted with the SiC epilayers, and after annealing, Si and carbon were observed at the surface of each boride layer.
Starting Page	14
Ending Page	18
Page Count	5
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	27
Issue Number	1
e-ISSN	1543186X
Language	English
Publisher	Springer-Verlag
Publisher Date	1998-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	CrB$_{2}$ ohmic contact p-type 6H-SiC specific contact resistance Rutherford backscattering spectrometry TiB$_{2}$ W$_{2}$B Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics and Spectroscopy
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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