NDLI: Fabrication and characterization of two-color midwavelength/long wavelength HgCdTe infrared detectors

Content Provider	Springer Nature Link
Author	Smith, E. P. G. Patten, E. A. Goetz, P. M. Venzor, G. M. Roth, J. A. sho, B. Z. Benson, J. D. Stoltz, A. J. Varesi, J. B. Jensen, J. E. Johnson, S. M. Radford, W. A.
Copyright Year	2006
Abstract	High-performance 20-µm unit-cell two-color detectors using an n-p$^{+}$-n HgCdTe triple-layer heterojunction (TLHJ) device architecture grown by molecular beam epitaxy (MBE) on (211)-oriented CdZnTe substrates with midwavelength (MW) infrared and long wavelength (LW) infrared spectral bands have been demonstrated. Detectors with nominal MW and LW cut-off wavelengths of 5.5 µm and 10.5 µm, respectively, exhibit 78 K LW performance with >70 % quantum efficiency, reverse bias dark currents below 300 pA, and RA products (zero field of view, 150-mV bias) in excess of 1×10$^{3}$ Ωcm$^{2}$. Temperature-dependent current-voltage (I–V) detector measurements show diffusion-limited LW dark current performance extending to temperatures below 70 K with good operating bias stability (150 mV ± 50 mV). These results reflect the successful implementation of MBE-grown TLHJ detector designs and the introduction of advanced photolithography techniques with inductively coupled plasma (ICP) etching to achieve high aspect ratio mesa delineation of individual detector elements with benefits to detector performance. These detector improvements complement the development of high operability large format 640×480 and 1280×720 two-color HgCdTe infrared focal plane arrays (FPAs) to support third generation forward looking infrared (FLIR) systems.
Starting Page	1145
Ending Page	1152
Page Count	8
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	35
Issue Number	6
e-ISSN	1543186X
Language	English
Publisher	Springer-Verlag
Publisher Date	2006-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	HgCdTe infrared detectors molecular beam epitaxy (MBE) two-color inductively coupled plasma (ICP) Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics and Spectroscopy
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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