NDLI: 1/f noise in very-long-wavelength infrared Hg$_{1−x}$Cd$

Content Provider	Springer Nature Link
Author	D’Souza, A. I. Stapelbroek, M. G. Wijewarnasuriya, P. S. Dewames, R. E. Williams, G. M.
Copyright Year	2002
Abstract	This paper investigates 1/f noise performance of very-long-wavelength infrared (VLWIR) Hg$_{1−x}$Cd$_{x}$Te (cutoff wavelengths λ$_{c}$=15 µm and λ$_{c}$=16 µm) photodiodes at 78 K, where detector current is varied by changing detector area, detector bias, and illumination conditions. Holding detector bias and temperature constant, the 1/f noise current is proportional to the detector current. Significant nonuniformity is observed in the noise data for each detector area because of the varying detector quality. Defects are presumed resident in the detectors to produce greater nonuniformity in 1/f noise as compared to dark current at 100-mV reverse bias. For λ$_{c}$=16 µm, 4-μ-radius, diffusion-limited diodes at 78 K and 100-mV reverse bias, the average dark current is I$_{d}$=9.76±1.59×10$^{−8}$ A, while the average noise current measured at 1 Hz is i$_{n}$=1.01±0.63×10$^{−12}$ A/Hz$^{1/2}$. For all detector areas measured, the average ratio in 1-Hz bandwidth is α$_{ D }$=i$_{n}$/I$_{d}$=1.39±1.09×10$^{−5}$. The 1/f noise was also measured on one diode as a function of detector-dark current as the applied bias is varied. In the diffusion-limited portion of this detector’s current-voltage (I-V) curve, to about 130 mV, the 1/f noise was independent of bias. For this diode, the ratio α$_{D}$=i$_{n}$/I$_{d}$=1.51±0.12×10$^{−5}$. The 1/f noise associated with tunneling currents is a factor of 3 greater than the 1/f noise associated with diffusion currents, α$_{T}$=i$_{n}$/I$_{T}$=5.21±0.83×10$^{−5}$. In addition, 1/f noise was measured on detectors held at −100 mV and 78K under dark and illuminated conditions. The measured ratios α$_{P}$ ∼α$_{D}$ ∼1.5×10$^{−5}$ were about the same for the dark and photon-induced diffusion currents. Therefore, the diffusion current appears to have a unique value of α as compared to the tunneling current. This may be indicative of unique noise-generation mechanisms associated with each current.
Starting Page	699
Ending Page	704
Page Count	6
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	31
Issue Number	7
e-ISSN	1543186X
Language	English
Publisher	Springer-Verlag
Publisher Date	2002-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	VLWIR HgCdTe 1/f Noise Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics and Spectroscopy
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Large VLWIR Hg$_{1−x}$Cd$_{x}$Te photovoltaic detectors

Current mechanisms in VLWIR Hg$_{1−x}$Cd$_{x}$Te photodiodes

Noise properties of linear defects in Hg$_{1−x}$Cd$_{x}$Te

1/f noise in large-area Hg$_{1−x}$Cd$_{x}$Te photodiodes

Investigations into the source of 1/f noise in Hg$_{x}$Cd$_{1−x}$Te diodes

VLWIR HgCdTe detector current-voltage analysis

Novel Hg$_{x}$Cd$_{1−x}$Te device structure for higher operating temperature detectors

1/f noise studies in uncooled narrow gap Hg$_{1−x}$Cd$_{x}$Te non-equilibrium diodes

MBE P-on-n Hg$_{1−x}$Cd$_{x}$Te heterostructure detectors on silicon substrates

1/f noise in very-long-wavelength infrared Hg$_{1−x}$Cd$_{x}$ Te detectors

Similar Documents

Large VLWIR Hg$_{1−x}$Cd$_{x}$Te photovoltaic detectors

Current mechanisms in VLWIR Hg$_{1−x}$Cd$_{x}$Te photodiodes

Noise properties of linear defects in Hg$_{1−x}$Cd$_{x}$Te

1/f noise in large-area Hg$_{1−x}$Cd$_{x}$Te photodiodes

Investigations into the source of 1/f noise in Hg$_{x}$Cd$_{1−x}$Te diodes

VLWIR HgCdTe detector current-voltage analysis

Novel Hg$_{x}$Cd$_{1−x}$Te device structure for higher operating temperature detectors

1/f noise studies in uncooled narrow gap Hg$_{1−x}$Cd$_{x}$Te non-equilibrium diodes

MBE P-on-n Hg$_{1−x}$Cd$_{x}$Te heterostructure detectors on silicon substrates

1/f noise in very-long-wavelength infrared Hg$_{1−x}$Cd$_{x}$ Te detectors